| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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32 pcs
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32 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| ESD Protection | |
| Lead Style | |
| Quiescent Current | |
| Tape & Reel |
The TPS1120D from Texas Instruments is a dual P-channel enhancement-mode MOSFET designed for efficient power distribution in portable, battery-powered applications. Optimized using the LinBiCMOS process, it supports 3-V or 5-V power rails, making it suitable for low-voltage systems where battery life is critical.
Key electrical characteristics include a low on-resistance of 0.18 Ohms at a gate-source voltage of -10 V, ensuring minimal power loss. The device features a maximum gate threshold voltage (VGS(th)) of -1.5 V and a very low quiescent current (IDSS) of only 0.5 uA, further contributing to power efficiency.
For protection against electrostatic discharge, the TPS1120D incorporates circuitry rated for up to 2 kV per MIL-STD-883C, Method 3015. This makes it a robust choice for portable equipment that may be exposed to ESD.
The MOSFET is housed in an 8-pin SOIC package, suitable for surface mounting. It is supplied in a standard reel quantity of 2500 units, compatible with tape and reel automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.32 | $0.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The on-resistance is 0.18 Ohms at VGS = -10 V.
The maximum gate threshold voltage is -1.5 V.
The quiescent current is a maximum of 0.5 uA.
The TPS1120D has ESD protection up to 2 kV per MIL-STD-883C, Method 3015.
The TPS1120D is available in an 8-pin SOIC package.
The standard package quantity is 2500 units.