| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
36,160 pcs
|
36160 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | 0440+ | On Request | On Request | |
|
1,790 pcs
|
1790 pcs | On Request | 1 | On Request | On Request | 7+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The TPS1101DR from Texas Instruments is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. Optimized for 3-V or 5-V power distribution in battery-powered systems, it utilizes the Texas Instruments LinBiCMOS process.
Key electrical specifications include a Drain to Source Voltage (Vdss) of 15 V, a maximum continuous current of 2.3 A (Ta), and a maximum On-Resistance (Rds On) of 90 mOhm at 2.5 A and 10 V Vgs. The Gate Threshold Voltage (Vgs(th)) is a maximum of 1.5 V at 250µA, and the maximum Gate-Source Voltage (Vgs) is +2V, -15V.
This MOSFET is available in an 8-SOIC package, measuring 4.9 mm x 6 mm, with a surface mount type. The operating temperature range is -40°C to 150°C (TJ). Its low rDS(on) and excellent AC characteristics make it suitable for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers.
The device offers ESD protection up to 2 kV per MIL-STD-883C, Method 3015. The ultrathin TSSOP package version is also available for height-restricted applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.01 | $1.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain to Source Voltage (Vdss) for the TPS1101DR is 15 V.
The maximum continuous current for the TPS1101DR is 2.3 A (Ta).
The On-Resistance (Rds On) is a maximum of 90 mOhm at 2.5 A and 10 V Vgs.
The TPS1101DR is a P-Channel MOSFET.
The TPS1101DR is available in an 8-SOIC package.
The operating temperature range for the TPS1101DR is -40°C to 150°C (TJ).