Mfr Part #:

TPS1101D

The Texas Instruments TPS1101D is a P-channel enhancement-mode MOSFET designed for 3-V or 5-V power distribution in battery-powered systems. It features a low on-resistance and is suitable for low-voltage switching applications.

✓ Total Stock: 4,533 pcs

$ Price Range: $1.21

TPS1101D Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	2,333 pcs On Request	2333 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	2,200 pcs On Request	2200 pcs	On Request	1	On Request	On Request	06+	On Request	On Request

TPS1101D Description

Short technical summary and product information.

The TPS1101D from Texas Instruments is a single, P-channel, enhancement-mode MOSFET optimized for 3-V or 5-V power distribution in battery-powered systems. It utilizes the Texas Instruments LinBiCMOS process.

Key electrical characteristics include a maximum Drain to Source Voltage (Vdss) of 15V and a maximum continuous drain current of 2.3A. The Rds On is a maximum of 90mOhm at 2.5A and 10V Vgs, with a gate threshold voltage (Vgs(th)) of 1.5V maximum at 250µA Id. The device supports drive voltages between 2.7V and 10V.

This MOSFET is designed for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers. Its low on-resistance and excellent AC characteristics make it a logical choice for these applications.

The TPS1101D is available in an 8-SOIC package, measuring 4.9mm x 6mm with a 29.4 mm² area. It is designed for surface mounting and operates within a temperature range of -40°C to 150°C (TJ).

TPS1101D Quick Information

Product Type: MOSFET

Canonical Name: TPS1101D Single P-channel Enhancement-Mode MOSFET

Subcategory: Single P-Channel

TPS1101D Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

TPS1101D Estimated Pricing

Qty	Low	High
1+	$1.21	$1.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPS1101D Features

Single P-channel enhancement-mode MOSFET.
15V Drain to Source Voltage (Vdss).
2.3A maximum continuous drain current.
90mOhm maximum Rds On at 2.5A, 10V.
Surface mount 8-SOIC package.

TPS1101D Applications

Ideal for low-voltage switching.
Suitable for PWM controllers.
Used in motor/bridge drivers.
Optimized for battery-powered systems.

TPS1101D FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum Drain to Source Voltage (Vdss) for the TPS1101D?

The maximum Drain to Source Voltage (Vdss) for the TPS1101D is 15V.

What is the maximum continuous drain current for the TPS1101D?

The TPS1101D has a maximum continuous drain current of 2.3A.

What is the Rds On for the TPS1101D?

The Rds On for the TPS1101D is a maximum of 90mOhm at 2.5A and 10V Vgs.

What is the operating temperature range of the TPS1101D?

The TPS1101D operates between -40°C and 150°C (TJ).

What package type is the TPS1101D available in?

The TPS1101D is available in an 8-SOIC package.

Is the TPS1101D RoHS compliant?

The TPS1101D is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for the TPS1101D?

The Moisture Sensitivity Level (MSL) for the TPS1101D is 1.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Texas Instruments
Current	2.3 A (Ta)
Drain to Source Voltage (Vdss)	15 V
Drive Voltage (Max Rds On, Min Rds On)	2.7V, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	11.25 nC @ 10 V
Mounting Type	Surface Mount
Operating Temperature	-40°C ~ 150°C (TJ)
Power Dissipation (Max)	791 mW (Ta)
Rds On (Max) @ Id, Vgs	90 mOhm @ 2.5A, 10V
Supplier Device Package	8-SOIC
Supplier Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	+2V, -15V
Vgs(th) (Max) @ Id	1.5 V @ 250µA