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TPS1100DRG4 The TPS1100DRG4 is a P-Channel MOSFET from Texas Instruments. It features a 15V drain-source voltage and 1.6A continuous drain current, housed in a surface-mount SOIC-8 package.
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TPS1100DRG4

Available from 1 distributors
Mfr Name: VBsemi
VBsemi
The TPS1100DRG4 is a P-Channel MOSFET from Texas Instruments. It features a 15V drain-source voltage and 1.6A continuous drain current, housed in a surface-mount SOIC-8 package.
✓ Total Stock: 27,585 pcs

TPS1100DRG4 Available from 1 distributor

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Optech Co.,Limited ✓
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27,585 pcs
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27585 pcs On Request 1 On Request On Request 19+ On Request On Request
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TPS1100DRG4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Lead Style
Mounting Style
Number of Pins
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Package / Case
Power Dissipation
SVHC Present
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TPS1100DRG4 Description

Short technical summary and product information.

The TPS1100DRG4 is a P-Channel enhancement-mode MOSFET manufactured by Texas Instruments. It is designed for 3-V or 5-V power distribution in battery-powered systems. Key electrical characteristics include a drain-to-source voltage (Vds) of 15V and a continuous drain current (Ids) of 1.6A.

 

This MOSFET has a low on-resistance (Rds) of 0.18 Ohms, making it suitable for low-voltage switching applications. It also features a fast rise time of 10 ns and a fall time of 2 ns.

 

The device is packaged in an 8-pin SOIC-8 surface-mount case with dimensions of 4.9mm length, 3.9mm width, and 1.75mm height. The operating temperature range is from -40°C to 150°C.

 

Optimized for battery-powered systems, the TPS1100DRG4 is ideal for applications where maximizing battery life is critical, such as power switches for PWM controllers or motor/bridge drivers.

TPS1100DRG4 Quick Information

Product Type: MOSFET
Canonical Name: TPS1100DRG4 P-Channel MOSFET
Subcategory: P-Channel

TPS1100DRG4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPS1100DRG4 Features

  • P-Channel MOSFET for power switching.
  • 15V drain-to-source voltage rating.
  • 1.6A continuous drain current capability.
  • Low 0.18 Ohm on-resistance.
  • SOIC-8 surface-mount package.

TPS1100DRG4 Applications

  • Ideal for battery-powered systems.
  • Suitable for low-voltage applications.
  • Used in PWM controller power switches.
  • Applicable for motor/bridge drivers.

TPS1100DRG4 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

15V.

What is the continuous drain current?

1.6A.

What is the on-resistance?

0.18Ω.

What is the package type?

SOIC-8.

What is the operating temperature range?

-40°C to 150°C (junction).

What is the polarity of this MOSFET?

P-Channel.

What are the rise and fall times?

Rise time 10ns typical, fall time 2ns typical.

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