| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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45,200 pcs
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45200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TPS1100DRG4 is a single P-channel enhancement-mode MOSFET manufactured by Texas Instruments. It is optimized for 3-V or 5-V power distribution in battery-powered systems.
Key electrical characteristics include a drain-to-source voltage (Vds) of 15V and a continuous drain current (Ids) of -1.6A. The on-resistance (Rds(on)) is 0.18 Ohms. It also features a fast rise time of 10 ns and a fall time of 2 ns.
This MOSFET is housed in a surface-mount SOIC-8 package with dimensions of 4.9mm in length, 3.9mm in width, and 1.75mm in height. The operating temperature ranges from -40°C to 125°C.
The TPS1100DRG4 is suitable for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) is 15 V.
The continuous drain current (Ids) is -1.6 A.
The on-resistance (Rds(on)) is 0.18 Ω.
The operating temperature ranges from -40°C to 125°C.
The TPS1100DRG4 is in a SOIC-8 package.
The TPS1100DRG4 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.