Mfr Part #:

TPS1100DR

The Texas Instruments TPS1100DR is a P-Channel MOSFET designed for 3-V or 5-V power distribution in battery-powered systems. It features a 15V drain-to-source voltage and a 1.6A current rating.

✓ Total Stock: 24,541 pcs

$ Price Range: $0.73

TPS1100DR Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	24,518 pcs On Request	24518 pcs	On Request	1	On Request	On Request	1648+5	On Request	On Request
PROSOFT ELECTRONICS ✓ Non-Authorised Inventory information	23 pcs On Request	23 pcs	On Request	1	On Request	On Request	19+	On Request	On Request

TPS1100DR Description

Short technical summary and product information.

The Texas Instruments TPS1100DR is a single P-channel enhancement-mode MOSFET optimized for 3-V or 5-V power distribution in battery-powered systems. It utilizes Texas Instruments' LinBiCMOS process.

Key electrical characteristics include a maximum drain-to-source voltage (Vdss) of 15V and a continuous drain current (Id) of 1.6A at ambient temperature. The Rds On is a maximum of 180mOhm at 1.5A drain current and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 1.5V at 250µA gate current. The maximum gate-source voltage is +/-15V, with a recommended drive voltage range of 2.7V to 10V.

This MOSFET is housed in an 8-SOIC package with a surface mount type, measuring 0.154 inches (3.90mm) in width. It has a maximum power dissipation of 791mW at ambient temperature and operates within a temperature range of -40°C to 150°C (TJ).

The TPS1100DR is suitable for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers. Its optimized design for portable battery-management systems aims to maximize battery life.

TPS1100DR Quick Information

Product Type: MOSFET

Canonical Name: TPS1100DR Single P-Channel Enhancement-Mode MOSFET

Subcategory: P-Channel

TPS1100DR Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

TPS1100DR Estimated Pricing

Qty	Low	High
1+	$0.73	$0.73

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPS1100DR Features

P-Channel enhancement-mode MOSFET.
15V drain-to-source voltage rating.
1.6A continuous drain current.
Low Rds(on) of 180mOhm.
Surface mount 8-SOIC package.

TPS1100DR Applications

Ideal for low-voltage switching.
Used in PWM controller power switches.
Suitable for motor/bridge drivers.
Optimized for battery-powered systems.

TPS1100DR FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the TPS1100DR?

15V.

What is the package type of the TPS1100DR?

8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range of the TPS1100DR?

-40°C to 150°C junction temperature.

What is the maximum continuous drain current?

1.6A at 25°C ambient.

What is the maximum on-resistance?

180mOhm at 1.5A and 10V gate drive.

What is the gate threshold voltage?

-1.5V maximum at 250µA drain current.

What is the maximum gate charge?

5.45nC at 10V gate voltage.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Texas Instruments
Current	1.6 A
Drain to Source Voltage (Vdss)	15 V
Drive Voltage (Max Rds On, Min Rds On)	10 V / 2.7 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	5.45 nC
Mounting Type	Surface Mount
Operating Temperature	-40°C / 150°C
Power Dissipation (Max)	791 mW
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	8-SOIC
Supplier Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-15 V / 2 V
Vgs(th) (Max) @ Id	-1.5 V