| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
400 pcs
|
400 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Texas Instruments TPS1100D is a single P-channel enhancement-mode MOSFET optimized for 3-V or 5-V power distribution in battery-powered systems. It utilizes Texas Instruments' LinBiCMOS process, offering a maximum gate threshold voltage (VGS(th)) of -1.5 V and a low drain-to-source leakage current (IDSS) of 0.5 uA. This makes it suitable for low-voltage, portable battery-management systems where maximizing battery life is critical.
With a low on-resistance (RDS(on)) of 180 mOhm at 1.5A and 10V VGS, and excellent AC characteristics including a typical rise time of 10 ns, the TPS1100D is a logical choice for low-voltage switching applications. These include power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers. The device has a drain-to-source voltage (Vdss) of 15 V and can handle a continuous current of 1.6A at ambient temperature.
The TPS1100D is available in an 8-SOIC package, measuring 4.9 mm x 6 mm with a footprint of 29.4 mm². This surface-mount package is suitable for applications where board space is a consideration. The operating temperature range is -40°C to 150°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.88 | $0.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
15V.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-40°C to 150°C (junction temperature).
180mΩ at Vgs=10V, Id=1.5A.
1.5V maximum at Id=250µA.
5.45nC at Vgs=10V.
1.6A at ambient temperature (Ta).