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TPN8R903NL,LQ The Toshiba TPN8R903NL,LQ is an N-Channel MOSFET with a 30V drain-to-source voltage and 20A continuous drain current. It features a low on-resistance and is available in a surface mount 8-TSON package.
Mfr Part #:

TPN8R903NL,LQ

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPN8R903NL,LQ is an N-Channel MOSFET with a 30V drain-to-source voltage and 20A continuous drain current. It features a low on-resistance and is available in a surface mount 8-TSON package.
✓ Total Stock: 285 pcs
$ Price Range: $2.56

TPN8R903NL,LQ Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
285 pcs
On Request
285 pcs On Request 1 On Request On Request 17+ On Request On Request
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TPN8R903NL,LQ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Failure Rate
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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TPN8R903NL,LQ Description

Short technical summary and product information.

The Toshiba TPN8R903NL,LQ is a high-performance N-Channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 20A at 25°C.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 8.9mOhm at 10A and 10V, and a gate threshold voltage (Vgs(th)) of 2.3V at 100µA. The gate charge (Qg) is a maximum of 9.8 nC at 4.5V, and the input capacitance (Ciss) is 820 pF at 15V. The device operates with drive voltages between 4.5V and 10V.

 

This MOSFET is housed in an 8-TSON Advance package with surface mount mounting type. It has a maximum power dissipation of 700mW (Ta) and 22W (Tc), and an operating temperature range of 150°C (TJ). The series is U-MOSVIII-H.

 

Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status. This component is suitable for applications requiring efficient power switching and control.

TPN8R903NL,LQ Quick Information

Product Type: MOSFET
Series: U-MOSVIII-H
Canonical Name: Toshiba TPN8R903NL,LQ N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

TPN8R903NL,LQ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPN8R903NL,LQ Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPN8R903NL,LQ Features

  • N-Channel MOSFET with 30V Vdss.
  • 20A continuous drain current capability.
  • Low 8.9mOhm max on-resistance.
  • Surface mount 8-TSON Advance package.
  • RoHS3 compliant.

TPN8R903NL,LQ Applications

  • Suitable for power switching circuits.
  • Used in DC-DC converters.
  • Ideal for load management.
  • Applicable in battery powered devices.

TPN8R903NL,LQ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage (Vdss) for the TPN8R903NL,LQ?

The drain-to-source voltage (Vdss) for the TPN8R903NL,LQ is 30 V.

What is the continuous drain current (Id) at 25°C?

The continuous drain current (Id) at 25°C is 20A (Tc).

What is the maximum on-resistance (Rds On) for this MOSFET?

The maximum on-resistance (Rds On) is 8.9mOhm at 10A, 10V.

What is the gate charge (Qg) at Vgs of 4.5V?

The gate charge (Qg) at Vgs of 4.5V is a maximum of 9.8 nC.

What is the operating temperature range?

The operating temperature is 150°C (TJ).

What type of MOSFET is the TPN8R903NL,LQ?

The TPN8R903NL,LQ is an N-Channel MOSFET.

What is the package type for the TPN8R903NL,LQ?

The package type is 8-TSON Advance (3.1x3.1) and it is surface mount.

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