| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
33,256 pcs
|
33256 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The Toshiba TPN6R303NC is an N-Channel MOSFET suitable for various electronic applications. It offers a breakdown voltage of 30V and a low on-resistance with an RDS(on) Max of 6.3mΩ. The device is designed for surface mounting and operates within a temperature range of -55°C to 150°C.
Key electrical characteristics include a typical drain-source resistance of 8.4mΩ and an input capacitance of 1.37nF. The MOSFET also features a rise time of 6ns and a fall time of 14ns, contributing to efficient switching performance. With a maximum power dissipation of 19W, it is suitable for moderate power applications.
This component is housed in a surface mount package, making it convenient for automated assembly processes. Its robust operating temperature range ensures reliability in diverse environmental conditions. The TPN6R303NC is manufactured by Toshiba, a reputable name in semiconductor technology.
30V.
6.3mΩ.
19W.
-55°C to 150°C.
1.37nF.
Typical rise time is 6ns and fall time is 14ns.
Surface mount.