| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,000 pcs
|
28000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TPN4R303NL,L1Q is an N-Channel MOSFET belonging to the U-MOSIII-H series. It is designed for applications such as high-efficiency DC-DC converters and switching voltage regulators.
Key electrical characteristics include a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 40A at 25°C case temperature. The device exhibits a low drain-source on-resistance (Rds(on)) of 4.3mOhm at 20A and 10V Vgs, and a gate charge (Qg) of 14.8nC at 10V Vgs. The gate threshold voltage (Vgs(th)) ranges from 1.3V to 2.3V at 200µA Id.
This MOSFET is housed in an 8-TSON Advance package with surface mount mounting type. It operates at temperatures up to 150°C (TJ). The device offers high-speed switching capabilities and low leakage current.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V
8-TSON Advance
150°C
4.3 milliohms at 20 amps and 10 volts gate drive
Up to 40 amperes at ambient temperature or 63 amperes at case temperature
14.8 nanocoulombs measured at a 10-volt gate-source voltage