| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,000 pcs
|
11000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TPN1600ANH,L1Q is a high-performance N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 100V and can handle a continuous drain current of 17A (Tc). The on-resistance (Rds On) is a maximum of 16mOhm at 8.5A and 10V gate-source voltage.
This MOSFET utilizes Metal Oxide Semiconductor technology and is suitable for surface mount applications, housed in an 8-PowerVDFN package with a supplier-specific designation of 8-TSON Advance (3.1x3.1). The operating temperature range extends up to 150°C (TJ).
Key electrical characteristics include a gate charge (Qg) of 19 nC at 10V and an input capacitance (Ciss) of 1600 pF at 50V. The gate threshold voltage (Vgs(th)) is 4V at 200µA, and the maximum gate-source voltage (Vgs) is ±20V. Power dissipation is rated at 700mW (Ta) and 42W (Tc).
This component is compliant with RoHS3 standards and has an MSL rating of 1. Its compact size and robust electrical specifications make it a versatile choice for power management and switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the TPN1600ANH,L1Q is 100V.
The TPN1600ANH,L1Q has a continuous drain current rating of 17A (Tc).
The maximum Rds On for the TPN1600ANH,L1Q is 16mOhm when Id is 8.5A and Vgs is 10V.
The TPN1600ANH,L1Q can operate at temperatures up to 150°C (TJ).
The TPN1600ANH,L1Q is supplied in an 8-PowerVDFN package, also referred to as 8-TSON Advance (3.1x3.1).
The TPN1600ANH,L1Q is designed for surface mount installation.