| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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22,525 pcs
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22525 pcs | On Request | 1 | 8 | On Request | 19+ | On Request | On Request |
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This Toshiba Type N-Channel MOSFET, part number TPN14006NH,L1Q(M, is engineered for efficient switching in various electronic circuits. It offers a maximum continuous drain current of 65A and a maximum drain-source voltage of 60V.
The MOSFET is housed in an 8-pin TSON surface-mount package, facilitating integration into compact designs. Key electrical characteristics include a maximum drain-source on-resistance of 41mΩ and a typical gate charge of 15nC. The enhancement mode operation and a threshold voltage range of 2.0 to 4.0V make it suitable for applications requiring precise control.
With a maximum power dissipation of 30W and an operating temperature range from -55°C to 150°C, this component is built for demanding environments. Its low leakage current and small gate charge contribute to improved performance and efficiency in DC-DC converters, motor drivers, and switching voltage regulators.
The maximum continuous drain current is 65A.
The maximum drain-source voltage is 60V.
The package type is 8-pin TSON.
The operating temperature range is from -55°C to 150°C.
The typical gate charge is 15nC.
The maximum power dissipation is 30W.