| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,024 pcs
|
2024 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The TPN11006NL,LQ from Toshiba is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 17A at 25°C.
This MOSFET utilizes MOSFET (Metal Oxide) technology and has a low on-resistance (Rds On) of 11.4mOhm at 8.5A and 10V gate-source voltage. The input capacitance (Ciss) is 2000 pF at 30V, and the gate charge (Qg) is 23 nC at 10V. The threshold voltage (Vgs(th)) is a maximum of 2.5V at 200µA, with a maximum gate-source voltage (Vgs) of ±20V.
Packaged in an 8-TSON Advance (3.1x3.1) surface mount configuration, the TPN11006NL,LQ has a maximum power dissipation of 700mW (Ta) or 30W (Tc). It operates at temperatures up to 150°C (TJ).
This component is suitable for applications requiring efficient switching and power handling. Its surface mount package facilitates integration into compact PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 60V.
The continuous drain current is 17A at 25°C.
The maximum on-resistance is 11.4 mOhm at 8.5A and 10V gate drive.
It is available in an 8-PowerVDFN package (8-TSON Advance, 3.1x3.1mm) for surface-mount assembly.
The maximum operating junction temperature is 150°C.
The maximum gate threshold voltage is 2.5V at 200µA drain current.
The maximum input capacitance is 2000 pF at 30V drain-source voltage.