BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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116,468 pcs
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116468 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
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22,527 pcs
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22527 pcs | On Request | 1 | On Request | On Request | 1812+ | On Request | On Request |
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The Toshiba TPN11006NL is an N-Channel MOSFET from the OptiMOS™ series, designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 8A at 25°C. The device offers a low on-resistance of 15mΩ at 9.3A and 10V gate-source voltage, contributing to efficient power management.
With a maximum power dissipation of 1.4W and an operating temperature range of -55°C to 150°C, the TPN11006NL is suitable for demanding environments. Its gate threshold voltage (Vgs(th)) is a maximum of 2V at 250µA, and the gate charge (Qg) is a maximum of 17nC at 10V. Input capacitance (Ciss) is 1300pF at 15V.
This MOSFET is configured as a dual N-Channel type with a logic-level gate feature, making it versatile for different circuit designs. It is housed in an 8-SOIC package, measuring 4.9mm x 3.9mm x 1.75mm, and is intended for surface mounting. The device is classified under the OptiMOS™ series and utilizes Metal Oxide Semiconductor technology.
The maximum drain-source voltage (Vdss) for the TPN11006NL is 30V.
The continuous drain current (Id) at 25°C is 8A.
The on-resistance (Rds On) is a maximum of 15mΩ at 9.3A and 10V.
The operating temperature range is -55°C to 150°C.
The TPN11006NL is in an 8-SOIC package.
Yes, the TPN11006NL features logic-level gate operation.