| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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37,383 pcs
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37383 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The TPN11003NL is a 30V surface mount MOSFET from Toshiba, housed in a TSON-8 package. It offers a typical on-resistance of 11mΩ at 10V gate drive with 5.5A drain current, enabling efficient power switching in compact designs. The device is rated for a maximum power dissipation of 19W and operates over a wide temperature range from -55°C to 150°C.
With fast switching characteristics including a 2.1ns rise time and 1.9ns fall time, the TPN11003NL is well-suited for high-frequency switching applications. The typical gate threshold voltage is 2.3V at 100μA. The surface mount TSON-8 package is ideal for space-constrained PCB layouts.
This MOSFET is designed for use in power management, DC-DC conversion, and load switching circuits where low on-resistance and fast switching are required.
30V.
TSON-8 surface mount package.
-55°C to 150°C.
11mΩ at 10V, 5.5A.
19W.
Rise time 2.1ns, fall time 1.9ns.
2.3V at 100μA.