| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,500 pcs
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6500 pcs | On Request | 1 | On Request | On Request | 1244+ | On Request | On Request | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The TPIC46L02DBRG4 from Texas Instruments is a versatile 6-channel low-side pre-FET driver. It provides both serial and parallel input interfaces for controlling external field-effect transistor (FET) power switches, making it suitable for applications like solenoids and relays.
This device offers robust fault management, including independent shorted-load/short-to-battery detection on all drain terminals, and independent off-state open-load fault sense. It also includes over-battery-voltage lockout protection and fault reporting. The TPIC46L02 specifically transitions the gate output to a low-duty cycle PWM mode when a shorted-load fault occurs.
Key electrical characteristics include a peak output current of 1.2mA per channel, input supply voltage ranging from 4.5V to 5.5V, and CMOS compatible inputs with hysteresis. The operating temperature range is -40°C to 150°C (TJ).
The TPIC46L02DBRG4 is supplied in a 28-SSOP surface-mount package with dimensions of 79.56 mm² (10.2 mm × 7.8 mm). Its design facilitates cascading and wire-ORing of outputs with multiple external devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.69 | $1.69 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The device operates with a battery supply voltage from 8V to 24V and a logic supply voltage from 4.5V to 5.5V.
28-SSOP (Shrink Small Outline Package) with surface mount.
-40°C to 150°C (junction).
6 independent channels.
Yes, it features an SPI interface for configuration and fault reporting.
Fault diagnostics include short-to-battery detection, off-state open-load sense, over-battery voltage lockout, under-battery voltage lockout, and an internal 55V inductive load clamp.
Low-side driver for N-channel MOSFETs.