| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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22,296 pcs
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22296 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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| Vgs(th) (Max) @ Id |
The Toshiba TPHR8504PL,L1Q is an N-Channel MOSFET belonging to the U-MOS IV -H series, suitable for applications requiring high-speed switching. It is designed for use in high-efficiency DC-DC converters, switching voltage regulators, and motor drivers.
Key electrical characteristics include a drain-source voltage (Vdss) of 40V and a continuous drain current (Tc) of 150A. The MOSFET exhibits a low drain-source on-resistance (Rds On) of 0.85mOhm at 50A and 10V Vgs, with a maximum gate charge (Qg) of 103nC at 10V Vgs. The gate threshold voltage (Vgs(th)) is a maximum of 2.4V at 1mA Id.
Thermal performance is supported by a maximum channel temperature of 175°C and a channel-to-case thermal resistance of 0.88°C/W. The device is available in an 8-PowerVDFN package and is designed for surface mounting.
This MOSFET offers features such as high-speed switching, small gate charge (23nC typical), and small output charge (85.4nC typical). It also has a low leakage current of 10µA maximum at 40V Vds.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 40V.
The continuous drain current is 150A.
The Rds On is a maximum of 0.85mOhm at 50A and 10V Vgs.
The maximum channel temperature (TJ) is 175°C.
It is available in an 8-PowerVDFN package for surface mounting.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.