| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,500 pcs
|
13500 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TPH8R903NL,LQ is an N-Channel MOSFET with a Metal Oxide semiconductor technology. It is rated for a maximum drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 20A at a case temperature (Tc). The on-resistance (Rds On) is a maximum of 8.9mOhm at 10A and 10V gate drive voltage.
This MOSFET has a maximum gate charge (Qg) of 9.8nC at 10V and an input capacitance (Ciss) of 820pF at 15V. The gate threshold voltage (Vgs(th)) is a maximum of 2.3V at 1mA. The maximum gate-to-source voltage (Vgs) is ±20V.
It operates at a maximum junction temperature (TJ) of 150°C. The device is available in a Surface Mount package, specifically an 8-PowerVDFN, with a supplier device package of 8-SOP Advance (5x5). Power dissipation is rated at 1.6W (Ta) and 24W (Tc).
The RoHS status is listed as RoHS3 Compliant, REACH Unaffected, and Moisture Sensitivity Level (MSL) is 1 Unlimited. These compliance details should be verified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V
20 A at case temperature
8.9 mOhm
8-SOP Advance (5x5)
150 °C
Maximum 2.3 V at 1 mA drain current
24 W