TPH8R80ANH,L1Q The Toshiba TPH8R80ANH,L1Q is an N-Channel MOSFET designed for surface mount applications. It offers a 100V drain-source voltage and a continuous drain current of 32A.
Mfr Part #:

TPH8R80ANH,L1Q

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPH8R80ANH,L1Q is an N-Channel MOSFET designed for surface mount applications. It offers a 100V drain-source voltage and a continuous drain current of 32A.
✓ Total Stock: 3,920 pcs
$ Price Range: $2.56

TPH8R80ANH,L1Q Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,920 pcs
3920 pcs On Request 1 On Request On Request 14+ On Request On Request

TPH8R80ANH,L1Q Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

TPH8R80ANH,L1Q Description

Short technical summary and product information.

The TPH8R80ANH,L1Q from Toshiba is a high-performance N-Channel MOSFET. It is designed for surface mount applications and comes in an 8-SOP Advance package.

 

Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 100V and a continuous drain current (Tc) of 32A. The on-resistance (Rds On) is rated at a maximum of 8.8mOhm at 16A and 10V gate-source voltage. Input capacitance (Ciss) is 2800 pF at 50V, and gate charge (Qg) is a maximum of 33 nC at 10V.

 

This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 61W (Tc). The gate-source voltage (Vgs) maximum is ±20V, with a gate threshold voltage (Vgs(th)) of 4V at 500µA. The technology used is MOSFET (Metal Oxide).

 

This component is suitable for various power switching applications where efficient and reliable performance is required. Its surface mount package facilitates integration into compact electronic designs.

TPH8R80ANH,L1Q Quick Information

Product Type: MOSFET
Canonical Name: TPH8R80ANH,L1Q N-Channel MOSFET
Subcategory: N-Channel

TPH8R80ANH,L1Q Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPH8R80ANH,L1Q Estimated Pricing

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1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPH8R80ANH,L1Q Features

  • 100V drain-source voltage rating.
  • 32A continuous drain current capability.
  • Low 8.8mOhm maximum on-resistance.
  • Surface mount 8-SOP Advance package.
  • 150°C maximum operating temperature.

TPH8R80ANH,L1Q Applications

  • Suitable for power switching circuits.
  • Ideal for compact electronic designs.
  • Used in high-efficiency power supplies.
  • Applicable in DC-DC converters.

TPH8R80ANH,L1Q FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the TPH8R80ANH,L1Q?

The maximum drain-to-source voltage (Vdss) is 100V.

What is the continuous drain current of the TPH8R80ANH,L1Q?

The continuous drain current is 32A (Tc).

What is the maximum on-resistance of the TPH8R80ANH,L1Q?

The maximum on-resistance (Rds On) is 8.8mOhm at 16A and 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range is up to 150°C (TJ).

What package type is the TPH8R80ANH,L1Q MOSFET supplied in?

It is supplied in an 8-PowerVDFN package, also referred to as 8-SOP Advance (5x5).

Is the TPH8R80ANH,L1Q RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the TPH8R80ANH,L1Q?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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