| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,861 pcs
|
2861 pcs | On Request | 1 | On Request | On Request | 1449+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TPH7R506NH,L1Q is an N-Channel MOSFET designed for power management applications. It offers a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 22A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 7.5mOhm at 11A and 10V gate drive voltage. The gate threshold voltage (Vgs(th)) is 4V maximum at 300µA, and the maximum gate-source voltage (Vgs) is ±20V. Input capacitance (Ciss) is rated at 2320 pF maximum at 30V.
This MOSFET operates within a junction temperature range of 150°C. It is available in a surface mount package, specifically the 8-SOP Advance (5x5) or 8-PowerVDFN. The technology used is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET).
Environmental compliance includes RoHS compliance and Moisture Sensitivity Level 1. The part is suitable for various electronic designs requiring efficient power switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 60 V.
The continuous drain current is 22 A at 25°C ambient temperature.
The maximum on-resistance is 7.5 mOhm at 11 A drain current and 10 V gate-source voltage.
The maximum gate threshold voltage is 4 V at 300 µA drain current.
The maximum operating junction temperature is 150°C.
The device is available in an 8-PowerVDFN package with supplier device package 8-SOP Advance (5x5 mm). It is supplied in tape and reel or cut tape.
The maximum gate charge is 31 nC at 10 V gate-source voltage.