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TPH7R006PL,L1Q The Toshiba TPH7R006PL,L1Q is an N-Channel MOSFET with a 60V drain-to-source voltage and a 60A current rating. It features a low on-resistance of 13.5mOhm maximum.
Mfr Part #:

TPH7R006PL,L1Q

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPH7R006PL,L1Q is an N-Channel MOSFET with a 60V drain-to-source voltage and a 60A current rating. It features a low on-resistance of 13.5mOhm maximum.
✓ Total Stock: 108 pcs
$ Price Range: $2.56

TPH7R006PL,L1Q Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
108 pcs
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108 pcs On Request 1 On Request On Request On Request On Request On Request
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TPH7R006PL,L1Q Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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TPH7R006PL,L1Q Description

Short technical summary and product information.

This Toshiba TPH7R006PL,L1Q is an N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage (Vdss) of 60V and can handle a continuous current of 60A (Tc). The MOSFET exhibits a maximum on-resistance (Rds On) of 13.5mOhm at 10A and 4.5V gate-source voltage.

 

With a maximum power dissipation of 81W (Tc) and an operating temperature up to 175°C, this device is suitable for demanding environments. It features a gate charge (Qg) of 22 nC and an input capacitance (Ciss) of 1875 pF.

 

The MOSFET is housed in an 8-PowerVDFN package and supports surface mount technology. The supplier device package is described as 8-SOP Advance (5x5). Its gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 200µA, and the maximum gate-source voltage (Vgs) is ±20V.

TPH7R006PL,L1Q Quick Information

Product Type: MOSFET
Canonical Name: TPH7R006PL,L1Q N-Channel MOSFET
Subcategory: N-Channel

TPH7R006PL,L1Q Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPH7R006PL,L1Q Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPH7R006PL,L1Q Features

  • 60V drain-to-source voltage rating.
  • 60A continuous current capability.
  • 13.5mOhm maximum on-resistance.
  • 175°C maximum operating temperature.
  • Surface mount 8-PowerVDFN package.

TPH7R006PL,L1Q Applications

  • Used in DC-DC converter power stages.
  • Suitable for load switching applications.
  • Ideal for motor drive circuits.
  • Used in battery management systems.

TPH7R006PL,L1Q FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the TPH7R006PL,L1Q?

The maximum drain-to-source voltage is 60V.

What is the maximum continuous drain current?

The maximum continuous drain current is 60A at case temperature Tc.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 13.5mOhm at 10A drain current and 4.5V gate-source voltage.

What is the operating junction temperature range?

The maximum junction temperature is 175°C.

What package is the TPH7R006PL,L1Q available in?

It is available in an 8-PowerVDFN surface mount package (8-SOP Advance 5x5).

What is the gate threshold voltage?

The maximum gate threshold voltage is 2.5V at 200µA drain current.

What is the maximum gate charge?

The maximum gate charge is 22nC at 10V gate-source voltage.

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