| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
51,657 pcs
|
51657 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TPH5900CNH,L1Q is an N-Channel Silicon MOSFET from the U-MOS III-H series, suitable for applications like high-efficiency DC-DC converters and switching voltage regulators. It offers a high drain-source voltage rating of 150V and a continuous drain current of 9A (Ta). The MOSFET boasts a low on-resistance of 30mOhm at 5A and 10V gate drive, along with a typical gate charge of 2.6 nC, contributing to its high-speed switching capability.
Key electrical characteristics include a maximum gate-source voltage of ±20V and a gate threshold voltage ranging from 2.0 to 4.0V. The device also features a low leakage current of 10µA (max) at 150V drain-source voltage. Thermal performance is supported by a channel-to-case thermal resistance of 2.97 °C/W, with maximum power dissipation rated at 42W (Tc) or 1.6W (Ta).
Packaged in an 8-SOP Advance (5x5) configuration, the TPH5900CNH,L1Q is designed for surface mounting. Its operating temperature range is -55°C to 150°C (TJ), and it is RoHS3 compliant with Moisture Sensitivity Level 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 150V.
The device is available in an 8-SOP Advance (5x5) surface mount package, also referenced as 8-SOIC.
The operating temperature range is -55°C to 150°C (junction temperature).
The maximum continuous drain current is 9A at Tc=25°C.
The maximum power dissipation is 42W at Tc=25°C.
The maximum on-resistance is 30mOhm at 5A/10V, and 60mOhm at 4A/10V. Typical value is 50mOhm at VGS=10V.
The gate threshold voltage ranges from 2.0V to 4.0V (VDS=10V, ID=0.2mA).