TPH5200FNH,L1Q The Toshiba TPH5200FNH,L1Q is an N-Channel MOSFET designed for high-efficiency DC-DC converters and switching voltage regulators. It offers a 250V drain-source voltage and 26A continuous current.
Mfr Part #:

TPH5200FNH,L1Q

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPH5200FNH,L1Q is an N-Channel MOSFET designed for high-efficiency DC-DC converters and switching voltage regulators. It offers a 250V drain-source voltage and 26A continuous current.
✓ Total Stock: 49,576 pcs
$ Price Range: $2.56

TPH5200FNH,L1Q Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
40,178 pcs
40178 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
9,398 pcs
9398 pcs On Request 1 On Request On Request 1504+ On Request On Request

TPH5200FNH,L1Q Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

TPH5200FNH,L1Q Description

Short technical summary and product information.

The Toshiba TPH5200FNH,L1Q is a silicon N-channel MOSFET from the U-MOS III-H series, suitable for high-efficiency DC-DC converters and switching voltage regulators. It features a high drain-source voltage rating of 250V and a continuous drain current of 26A at 25°C case temperature.

 

Key electrical characteristics include a low drain-source on-resistance of 52 mOhm at 13A and 10V gate-source voltage, and a typical gate charge of 8.2 nC. The threshold gate-source voltage (Vgs(th)) is rated at a maximum of 4V at 1mA.

 

This MOSFET is available in a surface-mount 8-SOP Advance package (5x5). It operates within a channel temperature range of -55°C to 150°C and has a storage temperature range of -55°C to 150°C. The device is designed for high-speed switching applications.

TPH5200FNH,L1Q Quick Information

Product Type: MOSFET
Canonical Name: TPH5200FNH,L1Q N-Channel MOSFET
Subcategory: N-Channel

TPH5200FNH,L1Q Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPH5200FNH,L1Q Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPH5200FNH,L1Q Features

  • 250V drain-source voltage rating.
  • 26A continuous drain current.
  • Low 52mOhm Rds On.
  • Small gate charge of 22nC.
  • Surface mount 8-SOP Advance package.

TPH5200FNH,L1Q Applications

  • Used in high-efficiency DC-DC converters.
  • Ideal for switching voltage regulators.
  • For high-speed switching applications.
  • Suitable for low leakage current designs.

TPH5200FNH,L1Q FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating for the TPH5200FNH,L1Q?

The drain-source voltage rating (Vdss) for the TPH5200FNH,L1Q is 250 V.

What is the continuous drain current for the TPH5200FNH,L1Q?

The continuous drain current (Tc) for the TPH5200FNH,L1Q is 26 A.

What is the Rds On (Max) for the TPH5200FNH,L1Q?

The Rds On (Max) is 52mOhm at 13A and 10V gate-source voltage.

What is the gate charge for the TPH5200FNH,L1Q?

The gate charge (Qg) (Max) is 22 nC at 10V gate-source voltage.

What type of MOSFET is the TPH5200FNH,L1Q?

The TPH5200FNH,L1Q is an N-Channel MOSFET.

What is the operating temperature range for the TPH5200FNH,L1Q?

The operating channel temperature for the TPH5200FNH,L1Q is up to 150°C.

What package is the TPH5200FNH,L1Q supplied in?

The TPH5200FNH,L1Q is supplied in an 8-SOP Advance (5x5) package.

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