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TPH4R50ANH,L1Q The Toshiba TPH4R50ANH,L1Q is an N-Channel MOSFET with a 100V drain-source voltage and 60A continuous drain current. It features a low Rds On of 4.5mOhm at 30A, 10V.
Mfr Part #:

TPH4R50ANH,L1Q

Available from 3 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPH4R50ANH,L1Q is an N-Channel MOSFET with a 100V drain-source voltage and 60A continuous drain current. It features a low Rds On of 4.5mOhm at 30A, 10V.
✓ Total Stock: 30,204 pcs
$ Price Range: $2.56

TPH4R50ANH,L1Q Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
30,000 pcs
On Request
30000 pcs On Request 1 On Request On Request 18+ On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
111 pcs
On Request
111 pcs On Request 1 On Request On Request On Request On Request On Request
Rayichip ✓
Non-Authorised Inventory information
93 pcs
On Request
93 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TPH4R50ANH,L1Q Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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TPH4R50ANH,L1Q Description

Short technical summary and product information.

This Toshiba TPH4R50ANH,L1Q is an N-Channel MOSFET designed for power switching applications. It offers a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 60A at 25°C (Tc).

 

The MOSFET exhibits a low on-resistance (Rds On) of 4.5mOhm at 30A and 10V gate drive voltage, ensuring efficient power transfer. The gate charge (Qg) is 58 nC at 10V, and the gate threshold voltage (Vgs(th)) is 4V at 1mA.

 

With a maximum power dissipation of 1.6W (Ta) and 78W (Tc), and an operating temperature of up to 150°C (TJ), this component is suitable for demanding environments. It is housed in a surface mount 8-SOP Advance (5x5) package, also referred to as 8-PowerVDFN.

 

The RoHS status is listed as RoHS3 Compliant, Moisture Sensitivity Level (MSL) is 1 Unlimited, and REACH status is Unaffected. These compliance details are based on existing database information and should be verified.

TPH4R50ANH,L1Q Quick Information

Product Type: MOSFET
Canonical Name: Toshiba TPH4R50ANH,L1Q N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

TPH4R50ANH,L1Q Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPH4R50ANH,L1Q Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPH4R50ANH,L1Q Features

  • N-Channel MOSFET technology.
  • 100V drain-to-source voltage.
  • 60A continuous drain current.
  • Low 4.5mOhm Rds On.
  • Surface mount 8-SOP Advance package.

TPH4R50ANH,L1Q Applications

  • Power switching applications.
  • Efficient power management.
  • High current handling.
  • Demanding thermal environments.

TPH4R50ANH,L1Q FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage (Vdss) for the TPH4R50ANH,L1Q?

The drain-to-source voltage (Vdss) for the TPH4R50ANH,L1Q is 100V.

What is the continuous drain current (Id) at 25°C for this MOSFET?

The continuous drain current (Id) at 25°C (Tc) for the TPH4R50ANH,L1Q is 60A.

What is the maximum on-resistance (Rds On) for the TPH4R50ANH,L1Q?

The maximum on-resistance (Rds On) is 4.5mOhm at 30A drain current and 10V gate-source voltage.

What is the operating temperature range for the TPH4R50ANH,L1Q?

The operating temperature for the TPH4R50ANH,L1Q is 150°C (TJ).

What package type is the TPH4R50ANH,L1Q MOSFET supplied in?

The TPH4R50ANH,L1Q is supplied in an 8-SOP Advance (5x5) package, also known as 8-PowerVDFN.

Is the TPH4R50ANH,L1Q RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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