| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
75,000 pcs
|
75000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
321 pcs
|
321 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Toshiba TPH4R10ANL,L1Q is an N-Channel MOSFET designed for power switching applications. It offers a drain-to-source voltage (Vds) of 100V and can handle continuous currents of 92A under ambient conditions (Ta) or 70A under case conditions (Tc).
The MOSFET exhibits a low on-resistance (Rds On) of 4.1mOhm at a drain current (Id) of 35A and gate-to-source voltage (Vgs) of 10V. Key electrical parameters include an input capacitance (Ciss) of 6300 pF at 50V and a gate charge (Qg) of 75 nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA.
Operating at temperatures up to 150°C, this device has a maximum power dissipation of 2.5W (Ta) or 67W (Tc). It is housed in an 8-PowerVDFN package and is designed for surface mounting.
The RoHS status is compliant, and it has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range for the TPH4R10ANL,L1Q MOSFET is up to 150°C.
The maximum drain-to-source voltage (Vds) for the TPH4R10ANL,L1Q is 100 V.
The Rds On (Max) is 4.1 mOhm at 35A drain current and 10V gate-to-source voltage.
The TPH4R10ANL,L1Q is an N-Channel MOSFET.
The TPH4R10ANL,L1Q MOSFET is supplied in an 8-PowerVDFN package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.