TPH4R10ANL,L1Q The Toshiba TPH4R10ANL,L1Q is an N-Channel MOSFET with a 100V drain-to-source voltage and a maximum current rating of 92A (Ta) / 70A (Tc). It features a low Rds On of 4.1mOhm at 35A and 10V.
Mfr Part #:

TPH4R10ANL,L1Q

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPH4R10ANL,L1Q is an N-Channel MOSFET with a 100V drain-to-source voltage and a maximum current rating of 92A (Ta) / 70A (Tc). It features a low Rds On of 4.1mOhm at 35A and 10V.
✓ Total Stock: 75,321 pcs
$ Price Range: $2.56

TPH4R10ANL,L1Q Available from 2 distributors

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✓ Non-Authorised
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Non-Authorised Inventory information
75,000 pcs
75000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
321 pcs
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TPH4R10ANL,L1Q Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

TPH4R10ANL,L1Q Description

Short technical summary and product information.

This Toshiba TPH4R10ANL,L1Q is an N-Channel MOSFET designed for power switching applications. It offers a drain-to-source voltage (Vds) of 100V and can handle continuous currents of 92A under ambient conditions (Ta) or 70A under case conditions (Tc).

 

The MOSFET exhibits a low on-resistance (Rds On) of 4.1mOhm at a drain current (Id) of 35A and gate-to-source voltage (Vgs) of 10V. Key electrical parameters include an input capacitance (Ciss) of 6300 pF at 50V and a gate charge (Qg) of 75 nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA.

 

Operating at temperatures up to 150°C, this device has a maximum power dissipation of 2.5W (Ta) or 67W (Tc). It is housed in an 8-PowerVDFN package and is designed for surface mounting.

 

The RoHS status is compliant, and it has a Moisture Sensitivity Level (MSL) of 1.

TPH4R10ANL,L1Q Quick Information

Product Type: MOSFET
Canonical Name: TPH4R10ANL,L1Q N-Channel MOSFET
Subcategory: N-Channel

TPH4R10ANL,L1Q Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPH4R10ANL,L1Q Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPH4R10ANL,L1Q Features

  • 100V drain-to-source voltage rating.
  • High continuous current capability.
  • Low on-resistance for efficiency.
  • Operates up to 150°C.
  • Surface mount 8-PowerVDFN package.

TPH4R10ANL,L1Q Applications

  • Power supply switching.
  • Load management circuits.
  • Motor control applications.
  • DC-DC converters.

TPH4R10ANL,L1Q FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range for the TPH4R10ANL,L1Q MOSFET?

The operating temperature range for the TPH4R10ANL,L1Q MOSFET is up to 150°C.

What is the maximum drain-to-source voltage (Vds) for this MOSFET?

The maximum drain-to-source voltage (Vds) for the TPH4R10ANL,L1Q is 100 V.

What is the Rds On (Max) for the TPH4R10ANL,L1Q at specified conditions?

The Rds On (Max) is 4.1 mOhm at 35A drain current and 10V gate-to-source voltage.

What type of MOSFET is the TPH4R10ANL,L1Q?

The TPH4R10ANL,L1Q is an N-Channel MOSFET.

What package is the TPH4R10ANL,L1Q MOSFET supplied in?

The TPH4R10ANL,L1Q MOSFET is supplied in an 8-PowerVDFN package.

Is the TPH4R10ANL,L1Q RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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