| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,320 pcs
|
28320 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
118 pcs
|
118 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Toshiba TPH4R008NH,L1Q is an N-Channel MOSFET belonging to the Transistors - FETs, MOSFETs - Single category. It is designed with a maximum drain-source voltage of 80V and a maximum continuous drain current of 60A (Tc).
The MOSFET has a low on-resistance of 4mOhm at 30A and 10V, with a gate threshold voltage of 4V at 1mA. Key electrical characteristics include an input capacitance of 5300 pF at 40V and a gate charge of 59 nC at 10V. The operating temperature range is from -55°C to 150°C.
Packaged in an 8-Pin SOP Advance (5x5) format, this component is designed for surface mounting. It offers a power dissipation of 1.6W (Ta) and 78W (Tc), making it suitable for demanding thermal environments. The device operates with a gate-source voltage of up to ±20V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 80V.
The continuous drain current is 60A (Tc).
The Rds On is a maximum of 4mOhm at 30A, 10V.
The operating temperature range is -55°C to 150°C.
It is available in an 8-Pin SOP Advance (5x5) package for surface mounting.