| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,700 pcs
|
3700 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TPH3R203NL,L1Q is an N-Channel MOSFET belonging to the U-MOSIII-H series, suitable for applications such as high-efficiency DC-DC converters and switching voltage regulators.
Key electrical characteristics include a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 47A at 25°C (Tc). The device exhibits a low drain-source on-resistance (Rds On) of 3.2 mΩ at a gate-source voltage (Vgs) of 10V, and a typical gate charge (Qg) of 5.2 nC. The gate threshold voltage (Vgs(th)) ranges from 1.3V to 2.3V.
This MOSFET is available in an 8-SOP Advance package with surface mount technology. It operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 44W (Tc) or 1.6W (Ta).
The device offers high-speed switching capabilities and low leakage current. It is designed for reliable performance in demanding power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
47 A at case temperature 25°C.
3.2 mOhm at 23.5 A and VGS = 10 V.
21 nC at VGS = 10 V.
2100 pF at VDS = 15 V.
8-PowerVDFN (8-SOP Advance 5x5 mm).
150°C.