| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
35,000 pcs
|
35000 pcs | On Request | 1 | On Request | On Request | 1525+/1337+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Toshiba TPH2R306NH,L1Q is an N-Channel MOSFET with a maximum drain-source voltage (Vdss) of 60V and a continuous current rating (Tc) of 60A. It features a low maximum on-resistance of 2.3mOhm at 30A and 10V gate-source voltage, with a gate charge (Qg) of 72nC at 10V.
The MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 1.6W at ambient temperature or 78W at case temperature. It is available in an 8-PowerVDFN package and uses Surface Mount technology.
Key electrical characteristics include an input capacitance (Ciss) of 6100pF at 30V and a gate threshold voltage (Vgs(th)) of 4V at 1mA. The maximum gate-source voltage is ±20V, with drive voltages ranging from 6.5V to 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 60V.
The continuous current rating is 60A at the case temperature (Tc).
The maximum on-resistance is 2.3mOhm when measured at 30A drain current and 10V gate-source voltage.
The operating junction temperature (TJ) ranges up to 150°C.
It is supplied in an 8-PowerVDFN package for surface mounting.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.