| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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72,940 pcs
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72940 pcs | On Request | 1 | On Request | On Request | 1921+ | On Request | On Request |
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The Toshiba TPH2R306NH is a high-performance N-Channel Power MOSFET. It is designed for use in various electronic applications requiring efficient power switching and control.
Key electrical specifications include a maximum drain-source voltage of 60V and a continuous drain current of 136A. The on-resistance (RDS(on)) is specified at a maximum of 2.3mΩ under typical test conditions. Input capacitance is 6.1nF, with rise and fall times of 9.9ns and 16ns respectively. The maximum power dissipation is rated at 78W.
This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in an SOP package and designed for surface mounting, making it suitable for compact electronic designs. The component has 8 terminals.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. These specifications make the TPH2R306NH a robust choice for demanding power management tasks.
The maximum drain-source voltage is 60V.
The continuous drain current is 136A.
The maximum on-resistance is 2.3mΩ.
The operating temperature range is from -55°C to 150°C.
The TPH2R306NH is supplied in an SOP package for surface mounting.
Yes, the TPH2R306NH is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.