| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,829 pcs
|
25829 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
650 pcs
|
650 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TPH2900ENH,L1Q is an N-channel MOSFET belonging to the U-MOS®-H technology family. It is engineered for applications such as high-efficiency DC-DC converters and switching voltage regulators.
Key electrical characteristics include a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 33A at 25°C ambient temperature. The device exhibits a low drain-source on-resistance (Rds On) of 29mΩ at 16.5A and 10V Vgs, and a typical Rds On of 24mΩ at 10V Vgs. It also features a small gate charge (Qg) of 8.2 nC typical and a low leakage current (Idss) of 10µA maximum at 200V Vds.
The MOSFET operates with a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vth) between 2.0V and 4.0V. The maximum channel temperature is 150°C, with a storage temperature range of -55°C to 150°C. Thermal resistance from channel to case is 1.60°C/W.
Packaged in an 8-SOP Advance (5x5) surface mount configuration, the TPH2900ENH,L1Q is suitable for compact designs. Its absolute maximum ratings include a pulsed drain current (Idp) of 102A and a power dissipation of 78W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
8-PowerVDFN (8-SOP Advance 5x5).
Channel temperature up to 150°C, storage temperature from -55 to 150°C.
24 mΩ typical at VGS=10V.
22 nC maximum at VGS=10V.
33A continuous at Ta=25°C, 36A at Tc=25°C.
176 mJ single pulse.