TPH2010FNH,L1Q The Toshiba TPH2010FNH,L1Q is an N-channel MOSFET designed for high-efficiency DC-DC converters and switching voltage regulators. It offers a 250V drain-source voltage and 5.6A continuous drain current.
Mfr Part #:

TPH2010FNH,L1Q

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPH2010FNH,L1Q is an N-channel MOSFET designed for high-efficiency DC-DC converters and switching voltage regulators. It offers a 250V drain-source voltage and 5.6A continuous drain current.
✓ Total Stock: 4,091 pcs
$ Price Range: $2.56

TPH2010FNH,L1Q Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,091 pcs
4091 pcs On Request 1 On Request On Request 1432+ On Request On Request

TPH2010FNH,L1Q Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

TPH2010FNH,L1Q Description

Short technical summary and product information.

The Toshiba TPH2010FNH,L1Q is an N-channel MOSFET belonging to the U-MOS III-H series, suitable for applications such as high-efficiency DC-DC converters and switching voltage regulators. It features a high drain-source voltage rating of 250V and a continuous drain current of 5.6A at 25°C ambient temperature.

 

Key electrical characteristics include a low drain-source on-resistance of 198 mOhm at 2.8A and 10V Vgs, a gate charge of 7 nC at 10V Vgs, and a gate-to-source threshold voltage between 2.0V and 4.0V. The device also exhibits a low leakage current of 10 µA maximum at 250V Vds.

 

This MOSFET is available in a Surface Mount package, specifically an 8-PowerVDFN or 8-SOP Advance (5x5) configuration. It operates at a maximum channel temperature of 150°C and has a power dissipation rating of 1.6W (Ta) or 42W (Tc).

 

The component is RoHS3 compliant and has an MSL rating of 1 Unlimited.

TPH2010FNH,L1Q Quick Information

Product Type: MOSFET
Canonical Name: TPH2010FNH,L1Q N-Channel MOSFET
Subcategory: N-Channel

TPH2010FNH,L1Q Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPH2010FNH,L1Q Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPH2010FNH,L1Q Features

  • 250V drain-source voltage rating.
  • 5.6A continuous drain current.
  • Low 198mOhm on-resistance.
  • Surface mount 8-PowerVDFN package.
  • High-speed switching capability.

TPH2010FNH,L1Q Applications

  • Used in DC-DC converter circuits.
  • Ideal for power management in portable devices.
  • Suitable for motor control applications.
  • Used in high-frequency switching power supplies.

TPH2010FNH,L1Q FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the TPH2010FNH,L1Q?

The maximum drain-source voltage is 250V.

What is the continuous drain current of the TPH2010FNH,L1Q?

The continuous drain current is 5.6A at 25°C ambient temperature.

What is the on-resistance of the TPH2010FNH,L1Q?

The on-resistance is a maximum of 198mOhm at 2.8A drain current and 10V gate-source voltage.

What package type is the TPH2010FNH,L1Q available in?

The TPH2010FNH,L1Q is available in an 8-PowerVDFN or 8-SOP Advance (5x5) package for surface mounting.

What is the operating temperature range for this MOSFET?

The channel temperature can operate up to 150°C.

Is the TPH2010FNH,L1Q RoHS compliant?

Yes, the TPH2010FNH,L1Q is RoHS3 compliant.

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