TPH1R712MD,L1Q The Toshiba TPH1R712MD,L1Q is a P-Channel MOSFET designed for surface mount applications. It features a 20V drain-to-source voltage and a continuous current rating of 60A.
Mfr Part #:

TPH1R712MD,L1Q

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPH1R712MD,L1Q is a P-Channel MOSFET designed for surface mount applications. It features a 20V drain-to-source voltage and a continuous current rating of 60A.
✓ Total Stock: 5,575 pcs
$ Price Range: $2.56

TPH1R712MD,L1Q Available from 1 distributor

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✓ Non-Authorised
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5,575 pcs
5575 pcs On Request 1 On Request On Request 1722+ On Request On Request

TPH1R712MD,L1Q Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

TPH1R712MD,L1Q Description

Short technical summary and product information.

This Toshiba TPH1R712MD,L1Q is a P-Channel MOSFET with a Metal Oxide semiconductor technology. It is designed for surface mount applications and comes in an 8-PowerVDFN package, also referred to as 8-SOP Advance (5x5).

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 20V and a continuous current (Tc) of 60A. The Rds On is a maximum of 1.7mOhm at 30A and 4.5V Vgs. The gate charge (Qg) is 182 nC (max) at 5V Vgs, and the input capacitance (Ciss) is 10900 pF (max) at 10V Vds. The gate threshold voltage (Vgs(th)) is 1.2V (max) at 1mA.

 

The device operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 78W (Tc). It is compatible with drive voltages of 2.5V and 4.5V for Rds On specifications. The maximum gate-source voltage (Vgs) is ±12V.

 

This MOSFET is suitable for various power management applications where a P-Channel device is required. Its surface mount package facilitates integration into compact electronic designs.

TPH1R712MD,L1Q Quick Information

Product Type: MOSFET
Canonical Name: TPH1R712MD,L1Q
Subcategory: P-Channel

TPH1R712MD,L1Q Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPH1R712MD,L1Q Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPH1R712MD,L1Q Features

  • P-Channel MOSFET with 20V drain-source voltage.
  • High continuous current rating of 60A.
  • Low Rds On of 1.7mOhm at 30A, 4.5V.
  • Surface mount 8-PowerVDFN package.
  • Operates up to 150°C junction temperature.

TPH1R712MD,L1Q Applications

  • Suitable for power switching circuits.
  • Ideal for battery management systems.
  • Used in DC-DC converter designs.
  • Applicable in load switch circuits.

TPH1R712MD,L1Q FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage (Vdss) for the TPH1R712MD,L1Q MOSFET?

The drain-to-source voltage (Vdss) is 20 V.

What is the maximum continuous current rating for this Toshiba MOSFET?

The continuous current rating is 60A (Tc).

What is the Rds On (Max) for the TPH1R712MD,L1Q at specified conditions?

The Rds On (Max) is 1.7mOhm at 30A and 4.5V Vgs.

What is the operating temperature range for this device?

The operating temperature is 150°C (TJ).

What type of package is the TPH1R712MD,L1Q MOSFET in?

It is in an 8-PowerVDFN package.

What is the RoHS status of the TPH1R712MD,L1Q?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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