| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
113,000 pcs
|
113000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
60,000 pcs
|
60000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TPH1R403NL,L1Q is a high-performance N-channel MOSFET designed for power applications. It offers a 30V drain-to-source voltage (Vdss) and can handle a continuous drain current of up to 60A at ambient temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 1.4mOhm when driven at 30A and 10Vgs. The gate threshold voltage (Vgs(th)) is a maximum of 2.3V at 500µA, with a maximum gate-source voltage of ±20V. Input capacitance (Ciss) is 4400pF at 15V, and gate charge (Qg) is 46nC at 10Vgs.
This MOSFET operates at a maximum junction temperature of 150°C. Its power dissipation is rated at 1.6W when mounted on a PCB (Ta) or 64W when measured at the case (Tc). The device is housed in an 8-PowerVDFN package and is designed for surface mounting.
Compliance includes RoHS3, MSL 1, and REACH Unaffected status, though these are currently unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-PowerVDFN, also known as 8-SOP Advance (5x5mm).
150°C.
1.4mOhm maximum at Vgs=10V and Id=30A.
Maximum 2.3V at Id=500µA.
4400pF at Vds=15V.
46nC at Vgs=10V.