| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
54,788 pcs
|
54788 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TPH1R204PL,L1Q is an N-Channel power MOSFET designed for high-current switching applications. It has a maximum drain-source voltage rating of 40V and a continuous drain current of 150A (limited by the package), while the silicon die itself can handle up to 246A. Its pulsed current capability extends to 500A for 100 µs pulses.
The device features an ultra-low typical on-resistance of 1.0 mOhm at VGS = 10V, minimizing conduction losses. The gate threshold voltage ranges from 1.4V (typical) to 2.4V (maximum) at ID = 0.5 mA, allowing compatibility with logic-level drive circuits. The maximum gate-source voltage rating is ±20V.
The MOSFET is housed in a compact 8-SOP surface mount package, suitable for space-constrained power management designs. Typical applications include DC-DC converters, motor drives, battery protection circuits, and high-current load switches.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40 V
150 A (Tc, limited by package). The silicon die is capable of 246 A.
1.0 mOhm at VGS = 10 V
500 A (100 µs pulse)
1.4 V to 2.4 V (typical 1.4 V)
±20 V
8-SOP (Small Outline Package)