| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
39,304 pcs
|
39304 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
27,565 pcs
|
27565 pcs | On Request | 1 | On Request | On Request | 1301+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The Toshiba TPH1400ANH is a high-performance N-Channel MOSFET. It features a maximum drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 9.5A at 25°C (Ta) and 35A at 25°C (Tc). The static drain-source on-resistance (Rds On) is a maximum of 16mOhm at 12A and 10V gate drive voltage.
This MOSFET utilizes Metal Oxide Semiconductor technology and is housed in a POWERDI3333-8 surface mount package. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA. The drive voltage ranges from 6V to 10V.
Designed for various electronic applications, the TPH1400ANH offers efficient power switching capabilities. Its surface mount package facilitates integration into compact circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80 V.
9.5 A at 25°C ambient temperature, and 35 A at case temperature.
Maximum 16 mOhm at 12 A drain current and 10 V gate voltage.
Maximum 3 V at 250 µA drain current.
6 V to 10 V.
POWERDI3333-8 surface mount package.
