| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40,178 pcs
|
40178 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Toshiba TPH12008NH,L1Q is a single N-channel MOSFET from the Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) technology family. It offers a drain-to-source voltage (Vdss) of 80V and can handle a continuous current of 24A (Tc). The device exhibits a maximum on-resistance (Rds On) of 12.3mOhm at 12A and 10V gate-source voltage, with a gate charge (Qg) of 22 nC at 10V.
Designed for surface mount applications, this MOSFET comes in an 8-PowerVDFN package, also referred to as an 8-SOP Advance (5x5) supplier package. It operates within a temperature range of -150°C (TJ) and has a maximum power dissipation of 1.6W at ambient temperature (Ta) and 48W at case temperature (Tc). The gate threshold voltage (Vgs(th)) is 4V at 300µA, and the maximum gate-source voltage (Vgs) is ±20V.
Key electrical characteristics include an input capacitance (Ciss) of 1900 pF at 40V. The technology employed is MOSFET (Metal Oxide), and it is classified as an N-Channel FET type. This component is suitable for various power switching and control applications where high current and voltage handling are required in a compact surface-mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 80V.
The maximum continuous drain current is 24A at the case temperature.
The maximum on-resistance is 12.3mOhm at a gate-source voltage of 10V and a drain current of 12A.
The maximum operating junction temperature is 150°C.
It is available in an 8-PowerVDFN surface-mount package, also known as 8-SOP Advance (5x5).
The maximum gate charge is 22nC at a gate-source voltage of 10V.
The maximum input capacitance is 1900pF at a drain-source voltage of 40V.