| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,072 pcs
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3072 pcs | On Request | 1 | On Request | On Request | 0747+ | On Request | On Request | |
|
1,568 pcs
|
1568 pcs | On Request | 1 | On Request | On Request | 1126+ | On Request | On Request |
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The Toshiba TPCS8303 is a P-Channel MOSFET semiconductor device. It is manufactured by Toshiba and comes in a TSSOP package, suitable for surface mount technology.
Key electrical specifications include a Drain-Source Voltage of 20V and a Breakdown Voltage of -20V. The on-resistance (RDS(on)) is specified as a maximum of 21mΩ at 10V and 36mΩ at 4.5V. It also features an input capacitance of 2.56nF, a rise time of 5ns, and a fall time of 42ns.
Thermal characteristics include a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. The device has a maximum power dissipation of 600mW and a typical power dissipation of 1.1W.
This MOSFET is designed for various electronic applications requiring efficient switching and power management. Its surface mount capability makes it suitable for compact designs.
The Drain-Source Voltage for the TPCS8303 is 20V.
The maximum on-resistance is 21mΩ at 10V and 36mΩ at 4.5V.
The TPCS8303 is in a TSSOP package.
The TPCS8303 is a surface mount device.
The operating temperature range is from -55°C to 150°C.
The RoHS Status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.