Mfr Part #:

TPCS8211

Mfr Name: Toshiba

The Toshiba TPCS8211 is a Silicon N Channel MOS Type Field Effect Transistor designed for battery applications, notebook PCs, and portable equipment. It offers a low drain-source ON resistance and a small footprint.

✓ Total Stock: 207,000 pcs

$ Price Range: $2.81

TPCS8211 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Romaks Technologies ✓ Non-Authorised Inventory information	200,000 pcs On Request	200000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	7,000 pcs On Request	7000 pcs	On Request	1	On Request	On Request	10+	On Request	On Request

TPCS8211 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Toshiba
SVHC Present	Present
Storage Temperature	-55 ~ 150 °C
Weight	0.035 g (typ.)

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TPCS8211 Description

Short technical summary and product information.

The Toshiba TPCS8211 is a high-performance Silicon N Channel MOS Type Field Effect Transistor, utilizing U-MOSIII technology. It is specifically designed for applications such as Lithium Ion batteries, notebook PCs, and portable equipment where space and efficiency are critical.

Key electrical characteristics include a low drain-source ON resistance of 16 mΩ (typ.) and a high forward transfer admittance of 11 S (typ.). The transistor also features a low leakage current of 10 μA (max) at 20V drain-source voltage and an enhancement mode with a threshold voltage ranging from 0.5 to 1.2 V.

Absolute maximum ratings are provided for various parameters including drain-source voltage (20V), gate-source voltage (±12V), and continuous drain current (6A). Power dissipation is rated at 1.1W for single-device operation under specific conditions. The device operates within a channel temperature range of up to 150°C and a storage temperature range of -55 to 150°C.

The TPCS8211 comes in a small and thin package, contributing to its small footprint, making it suitable for compact electronic designs. Thermal resistance values are specified for both single-device and dual operation scenarios.

TPCS8211 Quick Information

Product Type: Field Effect Transistor

Canonical Name: Toshiba TPCS8211 Silicon N Channel MOS Type Field Effect Transistor

Subcategory: N-Channel

TPCS8211 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

TPCS8211 Estimated Pricing

Qty	Low	High
1+	$2.81	$2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPCS8211 Features

Low drain-source ON resistance: 16 mΩ typical.
High forward transfer admittance: 11 S typical.
Low leakage current: 10 μA maximum.
Small footprint due to small and thin package.
Suitable for battery and portable equipment.

TPCS8211 Applications

Ideal for Lithium Ion battery applications.
Used in notebook PC designs.
Suitable for portable equipment.
Power management circuits.
Low voltage switching applications.

TPCS8211 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the typical drain-source ON resistance of the TPCS8211?

The typical drain-source ON resistance is 16 mΩ.

What is the maximum drain-source voltage for the TPCS8211?

The maximum drain-source voltage is 20 V.

What is the typical forward transfer admittance of the TPCS8211?

The typical forward transfer admittance is 11 S.

What is the maximum leakage current for the TPCS8211?

The maximum leakage current is 10 μA at 20 V.

What is the threshold voltage range for the TPCS8211?

The threshold voltage ranges from 0.5 to 1.2 V.

What is the operating temperature range for the TPCS8211?

The channel temperature can reach up to 150°C, and the storage temperature ranges from -55 to 150°C.