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7,000 pcs
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7000 pcs | On Request | 1 | On Request | On Request | 02+ | On Request | On Request |
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The Toshiba TPCS8102 is a Silicon P-Channel MOS Type Field Effect Transistor. It is manufactured by Toshiba and comes in a TSSOP package suitable for surface mounting.
Key electrical specifications include a maximum Drain-Source Voltage of 20V and a maximum continuous Drain Current rating of -6A. The on-resistance (RDS(on) Max) is 20mΩ, with a specified Drain-Source Resistance of 60mΩ. The maximum power dissipation is 1.5W.
This MOSFET features an input capacitance of 2.74nF and a maximum rise time of 7.6ns. It operates at DC voltages up to -20V and has a maximum operating temperature of 150°C.
The TPCS8102 is designed for various electronic applications requiring a P-Channel MOSFET in a compact surface-mount form factor.
The maximum Drain-Source Voltage is 20V.
The maximum continuous drain current rating is -6A.
The maximum on-resistance is 20mΩ.
The maximum power dissipation is 1.5W.
The package type is TSSOP.
The maximum operating temperature is 150°C.