Mfr Part #:

TPCS8101

Mfr Name: Toshiba

The Toshiba TPCS8101 is a P Channel MOS Type transistor designed for applications like Lithium Ion Battery and portable equipment. It offers low drain-source ON resistance and high forward transfer admittance.

✓ Total Stock: 3,090 pcs

TPCS8101 Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	3,090 pcs On Request	3090 pcs	On Request	1	On Request	On Request	04+	On Request	On Request

TPCS8101 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Toshiba
Input Capacitance	1810 pF
Package / Case	2-3R1B
Storage Temperature	-55 to 150 °C
Weight	0.035 g (typ.)

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TPCS8101 Description

Short technical summary and product information.

The Toshiba TPCS8101 is a Silicon P Channel MOS Type Field Effect Transistor, utilizing U-MOS II technology. It is designed for applications such as Lithium Ion Batteries and portable equipment, including notebook PCs.

Key electrical characteristics include a low drain-source ON resistance of 15 mΩ (typical) and a high forward transfer admittance of 12 S (typical). The transistor also features a low leakage current of -10 µA (maximum) at VDS = -30 V and an enhancement-mode gate threshold voltage (Vth) ranging from -0.8 V to -2.0 V.

Maximum ratings are provided for various parameters, including drain-source voltage (VDSS) of -30 V and gate-source voltage (VGSS) of ±20 V. Thermal characteristics include a channel-to-ambient thermal resistance of 83.3 °C/W (typical) under specific mounting conditions.

The TPCS8101 comes in a small and thin package, contributing to a small footprint in applications. It is an electrostatic sensitive device and requires careful handling.

TPCS8101 Quick Information

Product Type: Transistor

Canonical Name: TPCS8101 P Channel MOS Type Transistor

Subcategory: Single

TPCS8101 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

TPCS8101 Features

Low drain-source ON resistance: 15 mΩ typical.
High forward transfer admittance: 12 S typical.
Suitable for Lithium Ion Battery applications.
Small footprint due to compact package.
Enhancement-mode P Channel MOS Type.

TPCS8101 Applications

Ideal for Lithium Ion Battery applications.
Suitable for portable equipment designs.
Used in notebook PC power management.
General purpose switching applications.

TPCS8101 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the typical drain-source ON resistance of the TPCS8101?

The typical drain-source ON resistance (RDS(ON)) is 15 mΩ when VGS is -10 V and ID is -3 A.

What is the typical forward transfer admittance for the TPCS8101?

The typical forward transfer admittance (|Yfs|) is 12 S when VDS is -10 V and ID is -3 A.

What is the gate threshold voltage range for the TPCS8101?

The gate threshold voltage (Vth) ranges from -0.8 V to -2.0 V.

What are the maximum drain-source and gate-source voltages for the TPCS8101?

The maximum drain-source voltage (VDSS) is -30 V, and the gate-source voltage (VGSS) is ±20 V.

What is the typical input capacitance of the TPCS8101?

The typical input capacitance (Ciss) is 1810 pF.

What is the typical output capacitance of the TPCS8101?

The typical output capacitance (Coss) is 6 pF at 1 MHz.

What is the RoHS status of the TPCS8101?

The RoHS status is RoHS3 Compliant.