| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25,000 pcs
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25000 pcs | On Request | 1 | On Request | On Request | 15+16+ | On Request | On Request |
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| SVHC Present |
The Toshiba TPCP8L01(TE85L is a power transistor suitable for low-frequency applications. This NPN Darlington transistor features a collector-emitter voltage (V CEO) of 120V and a continuous collector current (I C) of 0.9A. Its pulsed collector current (I CP) can reach up to 3.0A, with a maximum power dissipation of 0.9W.
Electrical characteristics include a high DC current gain (hFE) ranging from a minimum of 2000 to a maximum of 9000 at I C =1A and V CE =2V. The collector-emitter saturation voltage (V CE(sat)) is a maximum of 1.5V when driven by I B =1mA and carrying I C =1A.
This component is housed in a PS-8 surface mount package with 8 pins. It is assembled in Japan or Malaysia. The product is RoHS compatible.
Applications for this transistor include various low-frequency power switching and amplification circuits where its specific voltage and current ratings are beneficial.
The collector-emitter voltage is 120V.
The continuous collector current is 0.9A.
The maximum DC current gain is 9000.
The minimum DC current gain is 2000.
The package type is PS-8.
It is a surface mount device.