| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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60,664 pcs
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60664 pcs | On Request | 1 | On Request | On Request | 08NPB | On Request | On Request | |
|
1,320 pcs
|
1320 pcs | On Request | 1 | On Request | On Request | 1138+ | On Request | On Request |
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The Toshiba TPCP8602 is a silicon PNP epitaxial transistor suitable for high-speed switching applications, DC-DC converters, and strobe flash circuits. It offers a high DC current gain (hFE) ranging from 200 to 500 at IC = -0.3 A, and a low collector-emitter saturation voltage (VCE(sat)) of -0.2 V (max).
Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of -50 V and a fall time (tf) of 90 ns (typ.). The transistor is housed in a 2-3V1A package and has a typical weight of 0.017 g.
This device is designed for applications requiring efficient switching performance. Its specifications make it suitable for power management circuits and other demanding electronic designs.
Maximum junction temperature is 150°C. Storage temperature range is -55 to 150°C.
The package is 2-3V1A surface mount.
Collector-base voltage -50V, collector-emitter voltage -50V, emitter-base voltage -7V.
Continuous collector current -2.5A, pulsed -4A.
200 to 500 at VCE=-2V, IC=-0.3A; minimum 100 at IC=-1A.
1.25W DC.