BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | 2011 | On Request | On Request |
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The Toshiba TPCP8510 is a Silicon MOS Type Field Effect Transistor suitable for high-speed and high-voltage switching applications, including DC-DC converters. It features a high DC current gain (hFE) ranging from 120 to 300 at an IC of 0.1 A. The transistor also exhibits a low collector-emitter saturation voltage (VCE(sat)) of a maximum of 0.14 V and a fast fall time (tf) of typically 0.2 μs, making it efficient for switching operations.
Designed for demanding applications, the TPCP8510's specifications support reliable performance in power conversion circuits. Its characteristics are optimized for applications requiring quick response and stable operation under varying load conditions. The component is intended for surface mount configurations, facilitating integration into compact electronic designs.
This transistor is part of Toshiba's line of semiconductor devices aimed at power management solutions. Its robust design and performance metrics make it a viable option for engineers developing power supplies, battery management systems, and other power electronics.
The DC current gain (hFE) of the TPCP8510 transistor is between 120 and 300 when the collector current (IC) is 0.1 A.
The maximum collector-emitter saturation voltage (VCE(sat)) for the TPCP8510 is 0.14 V.
The typical fall time (tf) of the TPCP8510 transistor is 0.2 μs.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.