| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,000 pcs
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7000 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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The Toshiba TPCP8303 is a general-purpose small signal P-Channel MOSFET. It is configured with two separate elements, each with a built-in diode.
Key electrical specifications include a minimum breakdown voltage of 20V and a maximum drain current (ID) of 3.8A. The maximum drain-source on-resistance is 0.06 ohm. The FET technology used is Metal-Oxide Semiconductor, and it operates in enhancement mode.
This MOSFET is housed in a small outline rectangular package, specifically the 2-3V1G, 8-pin configuration. It is designed for surface mounting and features flat terminals. The package body material is plastic/epoxy.
This component is suitable for various switching applications in electronic circuits.
The minimum breakdown voltage of the TPCP8303 is 20V.
The maximum drain current (ID) for the TPCP8303 is 3.8A.
The maximum drain-source on-resistance for the TPCP8303 is 0.06 ohm.
The TPCP8303 is in a 2-3V1G, 8-pin small outline rectangular package.
Yes, the TPCP8303 is designed for surface mounting.
The TPCP8303 is used for switching applications.