| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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73,950 pcs
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73950 pcs | On Request | 1 | On Request | On Request | 2010+ | On Request | On Request |
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| Manufacturer Name | |
| SVHC Present |
The Toshiba TPCP8204 is a Silicon N-Channel MOSFET designed for various electronic applications. This component offers a breakdown voltage of 30V, ensuring reliable operation within specified limits. The drain-source on-resistance is specified as a minimum of 77mΩ, indicating efficient power handling capabilities.
As a single MOSFET, the TPCP8204 is suitable for use in switching and amplification circuits. Its construction and specifications make it a component choice for designers working with discrete semiconductor products. Further details on its electrical characteristics, thermal performance, and package information would typically be found in the manufacturer's datasheet.
The breakdown voltage of the TPCP8204 MOSFET is 30V.
The minimum drain-source resistance for the TPCP8204 is 77mΩ.
The TPCP8204 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the TPCP8204 is 1 Unlimited.
The REACH status of the TPCP8204 is REACH Unaffected.