BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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20,540 pcs
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20540 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request | |
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4,438 pcs
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4438 pcs | On Request | 1 | On Request | On Request | 0610+ | On Request | On Request |
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The Toshiba TPCP8203 is a Silicon N-Channel MOSFET suitable for various electronic applications. It is manufactured by Toshiba and comes in an SMD/SMT package for surface mounting.
Key electrical specifications include a breakdown voltage of 40V and a drain-source on-resistance of 60mΩ. The device has a maximum power dissipation of 1.48W and a maximum operating temperature of 150°C. It also features a rise time of 15ns and a fall time of 9ns.
This MOSFET is designed for efficient switching and power management in electronic circuits. Its surface mount package allows for easy integration into compact designs. The RoHS status is listed as RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1 Unlimited.
The breakdown voltage of the TPCP8203 MOSFET is 40V.
The drain-source on-resistance for the TPCP8203 is 60mΩ.
The maximum power dissipation for the TPCP8203 is 1.48W.
The maximum operating temperature for the TPCP8203 is 150°C.
The TPCP8203 MOSFET is in an SMD/SMT package.
The TPCP8203 MOSFET is designed for surface mounting.