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58,000 pcs
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58000 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The Toshiba TPCP8202 is a silicon N-Channel MOS Type (U-MOSIV) field-effect transistor. It is designed for applications such as portable equipment, motor drives, and DC-DC converters.
Key electrical characteristics include a low drain-source ON-resistance of 19 mΩ (typ.) and a high forward transfer admittance of 20 S (typ.). The device features a low leakage current of 10 μA (max) at 30V VDS. The threshold voltage ranges from 0.7 to 1.4V.
Absolute maximum ratings include a drain-source voltage of 30V and a continuous drain current of 5.5A. Power dissipation varies depending on the mounting and operation mode, with a maximum of 1.48W for single-device operation on a glass-epoxy board. The channel temperature can reach up to 150°C.
The TPCP8202 is available in the 2-3V1G package and is lead(Pb)-free. It is an electrostatic-sensitive device and should be handled with care.
The maximum drain-source voltage (VDSS) for the TPCP8202 is 30V.
The typical drain-source ON-resistance (Rds(on)) for the TPCP8202 is 19 mΩ.
The maximum continuous drain current (ID) for the TPCP8202 is 5.5A.
The typical forward transfer admittance (|Yfs|) for the TPCP8202 is 20 S.
The maximum storage temperature for the TPCP8202 is 150°C.
The TPCP8202 is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the TPCP8202 is 1 Unlimited.