| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
104,700 pcs
|
104700 pcs | On Request | 1 | On Request | On Request | 1018+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Operating Temperature | |
| SVHC Present |
The Toshiba TPCP8201 is a surface-mount N-Channel MOSFET. It offers a breakdown voltage of 30V and a maximum on-resistance (RDS(on)) of 50mΩ. The input capacitance is rated at 470pF, with a typical rise time of 100ns.
This MOSFET is housed in an SMD/SMT package, suitable for surface mounting. It operates within a temperature range of -55°C to a maximum temperature not specified. The part has a maximum power dissipation of 360mW and a typical power dissipation of 1.48W.
Key electrical characteristics include a 30V breakdown voltage and low on-resistance, making it suitable for various switching and amplification applications. Its surface mount package facilitates integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
50mΩ maximum.
470pF typical.
100ns maximum.
360mW.
-55°C.
SMD/SMT.