| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
106,353 pcs
|
106353 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,000 pcs
|
7000 pcs | On Request | 1 | On Request | On Request | 13+PB | On Request | On Request |
| Category | |
| Manufacturer Name |
The Toshiba TPCP8106 is a P-Channel MOSFET belonging to the U-MOS silicon technology family. It is specifically designed for applications requiring efficient power management, such as Lithium-Ion secondary batteries and notebook PCs.
Key electrical characteristics include a low drain-source on-resistance of 25 mΩ (typ.) at a gate-source voltage of -10 V, and a low leakage current of -10 A (max) at a drain-source voltage of -30 V. The enhancement mode MOSFET has a threshold voltage (Vth) ranging from -0.8 V to -2.0 V at a drain-source voltage of -10 V.
The component features a small and thin package, contributing to a small footprint in circuit designs. This makes it suitable for space-constrained applications.
This MOSFET is a reliable component for power switching applications where low on-resistance and minimal leakage are critical for performance and efficiency.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical drain-source on-resistance is 25 mΩ when the gate-source voltage is -10 V.
The maximum leakage current is -10 A when the drain-source voltage is -30 V.
The threshold voltage ranges from -0.8 V to -2.0 V when the drain-source voltage is -10 V.
The TPCP8106 MOSFET is used in Lithium-Ion secondary batteries, power management switches, and notebook PCs.
The TPCP8106 is a P-Channel MOSFET in enhancement mode.