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228 pcs
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228 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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The TPCP8102(TE85L from Toshiba is a P-Channel MOSFET designed for various electronic applications. It features a maximum continuous drain current of 7.2 A and a maximum drain-source voltage of 20 V. The MOSFET operates in enhancement mode and has a maximum drain-source on-resistance of 18 mΩ.
This component is housed in a PS package and is designed for surface mounting, making it suitable for compact circuit designs. The operating temperature range is from -55 °C to +150 °C. Key electrical parameters include a maximum gate threshold voltage of 1.2V and a maximum power dissipation of 1.68 W. The typical gate charge is 33 nC at 5V gate-source voltage.
Toshiba Semiconductor manufactures this single-element MOSFET, which is constructed from Silicon. Its dimensions are 2.9mm in length, 2.4mm in width, and 0.8mm in height. The RoHS status is reported as RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1.
The maximum drain-source voltage is 20V.
The continuous drain current is 7.2A.
The maximum drain-source on-resistance is 18mΩ.
The operating temperature range is -55°C to +150°C.
The package is PS (surface mount) with 8 pins.
The maximum gate threshold voltage is 1.2V.
The typical gate charge is 33nC at 5V gate-source voltage.